Global solutions of the time-dependent drift-diffusion semiconductor equations

被引:51
作者
Fang, WF [1 ]
Ito, K [1 ]
机构
[1] N CAROLINA STATE UNIV,DEPT MATH,RALEIGH,NC 27695
关键词
D O I
10.1006/jdeq.1995.1172
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
In this paper, we study the global behavior of the time-dependent drift-diffusion model for semiconductor devices. Under certain assumptions on the mobilities, we first prove the existence of the global weak solutions with uniform L(infinity) bounds. Then we show that the system, when considered as a dynamical system, possesses an absorbing set with respect to the L(infinity) topology. (C) 1995 Academic Press, Inc.
引用
收藏
页码:523 / 566
页数:44
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