MAGNETIC-FIELD INDUCED TRANSITIONS BETWEEN QUANTIZED HALL AND INSULATOR STATES IN A DILUTE 2D ELECTRON-GAS

被引：65

作者：

DIORIO, M ^{[1
]}

PUDALOV, VM ^{[1
]}

SEMENCHINSKY, SG ^{[1
]}

机构：

[1] MOSCOW INST METROL SERV,MOSCOW 117334,USSR

来源：

PHYSICS LETTERS A | 1990年 / 150卷 / 8-9期

关键词：

D O I：

10.1016/0375-9601(90)90244-I

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the observation of a new phenomenon: a sequence of magnetic field induced transitions between well defined quantum Hall effect states, with a Hall resistance quantized as integer fractions of h/e2 and a vanishingly small longitudinal resistance, and insulator states with longitudinal resistance exceeding 2×109 Ω. This phenomenon is observed in extremely high mobility Si MOSFETs, in a range of electron concentrations corresponding to a dilute 2D electron gas in or near an activated electronic transport regime. We attribute this effect to a modulation of the metal-insulator transition by the quantum Hall effect or to the formation of a pinned Wigner solid. © 1990.

引用

页码：422 / 426

页数：5

共 11 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].