THE PRODUCTION AND STRUCTURE OF THE P-P3 ANTI-SITE DEFECT IN ELECTRON-IRRADIATED N-TYPE GAP

被引:12
作者
BEALL, RB
NEWMAN, RC
WHITEHOUSE, JE
WOODHEAD, J
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 36期
关键词
D O I
10.1088/0022-3719/17/36/002
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L963 / L968
页数:6
相关论文
共 23 条
[1]  
BARKER AS, 1972, J PHYS CHEM SOLIDS, V34, P123
[2]   THE GENERATION BY ELECTRON-IRRADIATION OF ARSENIC ANTI-SITE DEFECTS IN N-TYPE GAAS [J].
BEALL, RB ;
NEWMAN, RC ;
WHITEHOUSE, JE ;
WOODHEAD, J .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (15) :2653-2659
[3]  
BEALL RB, 1984, UNPUB J PHYS C
[4]   THE PROPERTIES OF GALLIUM-ARSENIDE DOUBLY DOPED WITH SILICON AND GERMANIUM OR SILICON AND TIN [J].
BROZEL, MR ;
LAITHWAITE, K ;
NEWMAN, RC ;
OZBAY, B .
JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) :619-624
[5]   THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J].
GOSWAMI, NK ;
NEWMAN, RC ;
WHITEHOUSE, JE .
SOLID STATE COMMUNICATIONS, 1981, 40 (04) :473-477
[6]   ESR DETECTION OF ANTISITE LATTICE-DEFECTS IN GAP, CDSIP2, AND ZNGEP2 [J].
KAUFMANN, U ;
SCHNEIDER, J ;
RAUBER, A .
APPLIED PHYSICS LETTERS, 1976, 29 (05) :312-313
[7]   ELECTRON-PARAMAGNETIC RESONANCE OF ELECTRON-IRRADIATED GAP [J].
KENNEDY, TA ;
WILSEY, ND .
PHYSICAL REVIEW B, 1981, 23 (12) :6585-6591
[8]  
KENNEDY TA, 1981, B AM PHYS SOC, V26, P255
[9]  
KENNEDY TA, 1984, UNPUB 1984 INT C DEF
[10]  
KENNEDY TA, 1979, I PHYS C SER, V46, P375