PHOTOLUMINESCENCE OF STRAINED-LAYER SUPERLATTICES

被引：12

作者：

KATO, H

NAKAYAMA, M

CHIKA, S

SANO, N

机构：

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 52卷 / 05期

关键词：

D O I：

10.1016/0038-1098(84)90877-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：559 / 561

页数：3

共 13 条

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[2]

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[3] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J].

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MATTHEWS, JW ;

BLAKESLEE, AE .

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[5] BAND-GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARDS LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INP [J].

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BARNS, RL .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :659-661

[6] RAMAN-SCATTERING FROM GAAS-INXGA1-XAS STRAINED-LAYER SUPERLATTICES [J].

NAKAYAMA, M ;

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SANO, N .

SOLID STATE COMMUNICATIONS, 1984, 51 (05) :343-345

[7]

NEAVE JH, 1983, APPL PHYS A, V30, P1

[8] ELECTRONIC-STRUCTURE OF GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICES WITH X-LESS-THAN-0.5 [J].

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[9]

OSBOURN GC, 1982, APPL PHYS LETT, V41, P178

[10]

PANISH C, 1978, HETEROSTRUCTURE LA B

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