ANNULAR FACETS AND IMPURITY STRIATIONS IN TELLURIUM-DOPED GALLIUM ARSENIDE

被引：13

作者：

CRONIN, GR

LARRABEE, GB

OSBORNE, JF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 03期

关键词：

D O I：

10.1149/1.2423937

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：292 / &

共 9 条

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[9] ETCH PITS IN GALLIUM ARSENIDE [J].

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