10-NM LINEWIDTH ELECTRON-BEAM LITHOGRAPHY ON GAAS

被引：126

作者：

CRAIGHEAD, HG

HOWARD, RE

JACKEL, LD

MANKIEWICH, PM

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.93757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：38 / 40

页数：3

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[4] 50-NM SILICON STRUCTURES FABRICATED WITH TRILEVEL ELECTRON-BEAM RESIST AND REACTIVE-ION ETCHING [J].

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HOWARD, RE ;

HU, EL ;

TENNANT, DM ;

GRABBE, P .

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