CARRIER LIFETIMES IN SILICON EPITAXIAL LAYERS DEPOSITED ON OXYGEN-IMPLANTED SUBSTRATES

被引：9
作者：
DAS, K
SHORTHOUSE, GP
BUTCHER, JB
机构：
来源：
ELECTRONICS LETTERS | 1983年 / 19卷 / 04期
关键词：
D O I：
10.1049/el:19830098
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：139 / 140
页数：2
相关论文
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