INFLUENCE OF AN ELECTRIC-FIELD ON THE MAGNETORESISTANCE OF LIGHTLY DOPED GALLIUM-ARSENIDE

被引：0
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作者：
KAMARA, MS
LUKASHEVICH, MG
STELMAKH, VF
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1985年 / 19卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：695 / 696
页数：2
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