CALCULATION OF TUNNELING CURRENTS IN (HG,CD)TE PHOTODIODES USING A 2-SIDED JUNCTION POTENTIAL

被引：6
作者：
BECK, WA
BYER, NE
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 03期
关键词：
D O I：
10.1109/T-ED.1984.21517
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：292 / 297
页数：6
相关论文
共 11 条
[1]   FIELD-INDUCED TUNNELING IN HG1-XCDX TE PHOTO-DIODES [J].
ANDERSON, WW .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1080-1082
[2]   TUNNEL CONTRIBUTION TO HG1-XCDXTE AND PB1-XSNXTE P-N-JUNCTION DIODE CHARACTERISTICS [J].
ANDERSON, WW .
INFRARED PHYSICS, 1980, 20 (06) :353-361
[3]   TUNNEL CURRENT LIMITATIONS OF NARROW BANDGAP IR CHARGE COUPLED DEVICES [J].
ANDERSON, WW .
INFRARED PHYSICS, 1977, 17 (02) :147-164
[4]   ION-IMPLANTATION STUDY OF HGCDTE [J].
BUBULAC, LO ;
TENNANT, WE ;
SHIN, SH ;
WANG, CC ;
LANIR, M ;
GERTNER, ER ;
MARSHALL, ED .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :495-500
[5]  
DORNHAUS R, 1976, SOLID STATE PHYSICS, P37
[6]  
Duke C. B., 1969, TUNNELING SOLIDS
[7]   CCD READOUT OF INFRARED HYBRID FOCAL-PLANE ARRAYS [J].
FELIX, P ;
MOULIN, M ;
MUNIER, B ;
PORTMANN, J ;
REBOUL, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :175-188
[8]  
MCNALLY PJ, 1973, AD762352
[9]   RANGE AND RANGE STRAGGLING OF ION-IMPLANTED BORON IN CD0.2HG0.8TE [J].
RYSSEL, H ;
MULLER, K ;
BIERSACK, J ;
KRUGER, W ;
LANG, G ;
JAHNEL, F .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 57 (02) :619-624
[10]   INTRINSIC CARRIER CONCENTRATION OF HG1-CHICDCHITE AS A FUNCTION OF CHI AND T USING K-P CALCULATIONS [J].
SCHMIT, JL .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :2876-&
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