EPITAXIAL GROWTH OF ALUMINUM NITRIDE

被引：64

作者：

CHU, TL

ING, DW

NOREIKA, AJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 10期

关键词：

D O I：

10.1016/0038-1101(67)90152-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1023 / &

共 10 条

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[9] HERSTELLUNG DER NITRIDE VON BOR, ALUMINIUM, GALLIUM UND INDIUM NACH DEM AUFWACHSVERFAHREN [J].

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