COMMENT ON CORRELATION EFFECTS IN HOPPING CONDUCTION

被引：20

作者：

KNOTEK, ML

POLLAK, M

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

[2] UNIV CALIF RIVERSIDE,DEPT PHYS,RIVERSIDE,CA 92502

来源：

PHILOSOPHICAL MAGAZINE | 1977年 / 35卷 / 04期

关键词：

D O I：

10.1080/14786437708232653

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1133 / 1136

页数：4

共 22 条

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[12]

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[14]

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[15] EFFECT OF ELECTRON INTERACTION ON VARIABLE-RANGE HOPPING [J].

MOTT, NF .

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[16] VARIABLE-RANGE HOPPING IN A SILICON INVERSION LAYER [J].

PEPPER, M ;

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ADKINS, CJ ;

OAKLEY, RE .

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[17] DIELECTRIC THEORY FOR AMORPHOUS SEMICONDUCTORS [J].

POLLAK, M .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1971, 325 (1562) :383-&

[18] DC CONDUCTIVITY OF AMORPHOUS GERMANIUM AND STRUCTURE OF PSEUDOGAP [J].

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GLICK, H .

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[19]

Pollak M, 1970, DISCUSS FARADAY SOC, V50, P13

[20]

SHLIMAK IS, 1972, JETP LETT-USSR, V15, P20

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