GASB SURFACES STATES AND SCHOTTKY-BARRIER PINNING

被引：43

作者：

CHYE, PW ^{[1
]}

BABALOLA, IA ^{[1
]}

SUKEGAWA, T ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305

来源：

PHYSICAL REVIEW LETTERS | 1975年 / 35卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.35.1602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1602 / 1604

页数：3

共 12 条

[1]

CHYE P, TO BE PUBLISHED

[2] RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].

EASTMAN, DE ;

FREEOUF, JL .

PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627

[3] SURFACE STATE BAND ON GAAS (110) FACE [J].

GREGORY, PE ;

SPICER, WE ;

CIRACI, S ;

HARRISON, WA .

APPLIED PHYSICS LETTERS, 1974, 25 (09) :511-514

[4] PHOTOEMISSION STUDIES OF GAAS-CS INTERFACE [J].

GREGORY, PE ;

SPICER, WE .

PHYSICAL REVIEW B, 1975, 12 (06) :2370-2381

[5]

GREGORY PE, TO BE PUBLISHED

[6] EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110) [J].

LAPEYRE, GJ ;

ANDERSON, J .

PHYSICAL REVIEW LETTERS, 1975, 35 (02) :117-120

[7]

MACRAE AU, 1964, J APPL PHYS, V35, P1629

[8] PHENOMENOLOGY OF METAL-SEMICONDUCTOR ELECTRICAL BARRIERS [J].

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :935-942

[9]

SPICER WE, TO BE PUBLISHED

[10] ELECTRONIC PROPERTIES OF CLEAN AND CESIATED (110) SURFACES OF GASB [J].

VILJOEN, PE ;

FISCHER, TE ;

JAZZAR, MS .

SURFACE SCIENCE, 1972, 32 (03) :506-&

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