HIGH-TEMPERATURE PROCESS LIMITATION ON TISI2

被引：96

作者：

TING, CY

DHEURLE, FM

IYER, SS

FRYER, PM

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 12期

关键词：

D O I：

10.1149/1.2108491

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2621 / 2625

页数：5

共 8 条

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PARMANTIE, WD .

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[2] AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON [J].

IYER, SS ;

TING, CY ;

FRYER, PM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) :2240-2245

[3]

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[4]

LAU CK, 1983, ECS DIG EXT ABSTR, V83, P569

[5] MO/TI BILAYER METALLIZATION FOR A SELF-ALIGNED TISI2 PROCESS [J].

PARK, HK ;

SACHITANO, J ;

EIDEN, G ;

LANE, E ;

YAMAGUCHI, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :259-263

[6] INTERACTION BETWEEN TI AND SIO2 [J].

TING, CY ;

WITTMER, M ;

IYER, SS ;

BRODSKY, SB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2934-2938

[7]

TING CY, 1982, ELECTROCHEMICAL SOC, P213

[8]

WONG CY, UNPUB J APPL PHYS

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