STABILIZED POWER MOS-BIPOLAR MODULES

被引：1

作者：

LAZARUS, MJ ^{[1
]}

RABAH, KVO ^{[1
]}

MCKEANY, PS ^{[1
]}

机构：

[1] UNIV NAIROBI,DEPT PHYS,NAIROBI,KENYA

来源：

IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1991年 / 138卷 / 05期

关键词：

BIPOLAR TRANSISTORS; STABILITY;

D O I：

10.1049/ip-g-2.1991.0092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique, previously used to restore the feature of nearly constant-current (high output slope resistance) of intensively self-heated power MOSFETs, has been extended to MOS-bipolar hybrid power devices of different possible circuits. One particular configuration has been shown to be outstandingly successful.

引用

页码：564 / 566

页数：3

共 5 条

[1] POWER INTEGRATED-CIRCUITS - A BRIEF OVERVIEW
BALIGA, BJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (12) : 1936 - 1939
[2] THE INSULATED GATE TRANSISTOR - A NEW 3-TERMINAL MOS-CONTROLLED BIPOLAR POWER DEVICE
BALIGA, BJ
ADLER, MS
LOVE, RP
GRAY, PV
ZOMMER, ND
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) : 821 - 828
[3] David G. R., 1980, International Electron Devices Meeting. Technical Digest, P83
[4] GAUEN K, 1984, ELECTRONIC DESI 0405, P103
[5] LAZARUS MJ, IEE P I, V135, P97

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