APPLICATION OF POROUS SILICON FORMATION SELECTIVITY TO IMPURITY PROFILING IN P-TYPE SILICON SUBSTRATES

被引：15

作者：

LIGEON, M ^{[1
]}

MULLER, F ^{[1
]}

HERINO, R ^{[1
]}

GASPARD, F ^{[1
]}

HALIMAOUI, A ^{[1
]}

BOMCHIL, G ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3814 / 3819

页数：6

共 8 条

[1] CHARACTERISTICS OF SOI CMOS CIRCUITS MADE IN N/N+/N OXIDIZED POROUS SILICON STRUCTURES [J].

BARLA, K ;

BOMCHIL, G ;

HERINO, R ;

MONROY, A ;

GRIS, Y .

ELECTRONICS LETTERS, 1986, 22 (24) :1291-1293

[2] MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON [J].

BEALE, MIJ ;

CHEW, NG ;

UREN, MJ ;

CULLIS, AG ;

BENJAMIN, JD .

APPLIED PHYSICS LETTERS, 1985, 46 (01) :86-88

[3]

Bomchil G., 1988, Microelectronic Engineering, V8, P293, DOI 10.1016/0167-9317(88)90022-6

[4] CHARGE-EXCHANGE MECHANISM RESPONSIBLE FOR P-TYPE SILICON DISSOLUTION DURING POROUS SILICON FORMATION [J].

GASPARD, F ;

BSIESY, A ;

LIGEON, M ;

MULLER, F ;

HERINO, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (10) :3043-3046

[5] POROSITY AND PORE-SIZE DISTRIBUTIONS OF POROUS SILICON LAYERS [J].

HERINO, R ;

BOMCHIL, G ;

BARLA, K ;

BERTRAND, C ;

GINOUX, JL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :1994-2000

[6] POROUS SILICON TECHNIQUES FOR SOI STRUCTURES [J].

TSAO, SS .

IEEE CIRCUITS AND DEVICES MAGAZINE, 1987, 3 (06) :3-7

[7] SELECTIVE POROUS SILICON FORMATION IN BURIED P+ LAYERS [J].

TSAO, SS ;

MYERS, DR ;

GUILINGER, TR ;

KELLY, MJ ;

DATYE, AK .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4182-4186

[8] THE KINETICS AND MECHANISM OF OXIDE LAYER FORMATION FROM POROUS SILICON FORMED ON P-SI SUBSTRATES [J].

YON, JJ ;

BARLA, K ;

HERINO, R ;

BOMCHIL, G .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :1042-1048

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