FLEXURAL STRENGTH OF PROOF-TESTED AND NEUTRON-IRRADIATED SILICON-CARBIDE

被引:48
|
作者
PRICE, RJ
HOPKINS, GR
机构
关键词
D O I
10.1016/0022-3115(82)90547-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:732 / 738
页数:7
相关论文
共 50 条
  • [1] POSITRON DIAGNOSTICS OF DEFECTS IN NEUTRON-IRRADIATED SILICON-CARBIDE
    GIRKA, AI
    KULESHIN, VA
    MOKRUSHIN, AD
    MOKHOV, EN
    SVIRIDA, SV
    SHISHKIN, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (07): : 790 - 793
  • [3] X-RAY-LINE BROADENING IN NEUTRON-IRRADIATED SILICON-CARBIDE
    ISEKI, T
    YANO, T
    MIYAZAKI, H
    JOURNAL OF NUCLEAR MATERIALS, 1992, 191 : 588 - 591
  • [4] CHARACTERIZATION OF MACROSCOPIC PROPERTIES AND CRYSTALLINE DEFECTS IN NEUTRON-IRRADIATED SILICON-CARBIDE
    YANO, T
    MARUYAMA, T
    ISEKI, T
    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1991, 35 (02): : 327 - 338
  • [5] STRENGTH OF PROOF-TESTED OPTICAL FIBERS
    SAKAGUCHI, S
    NAKAHARA, M
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1983, 66 (03) : C46 - C47
  • [6] Electrical properties of neutron-irradiated silicon carbide
    (Trans Tech Publications Ltd): : 389 - 393
  • [7] Electrical properties of neutron-irradiated silicon carbide
    Kanazawa, S
    Okada, M
    Ishii, J
    Nozaki, T
    Shin, K
    Ishihara, S
    Kimura, I
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 517 - 520
  • [8] FLEXURAL STRENGTH OF LAPPED AND OXIDIZED SILICONIZED SILICON-CARBIDE
    TOMLINSON, WJ
    KHELA, S
    JASPER, CA
    MATTHEWS, SJ
    JOURNAL OF MATERIALS SCIENCE, 1992, 27 (12) : 3372 - 3378
  • [9] MICROSTRUCTURAL CHANGES IN NEUTRON AND ION IRRADIATED SILICON-CARBIDE
    HARRISON, SD
    CORELLI, JC
    RATKOWSKI, AJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 179 - 179
  • [10] EFFECTS OF THERMAL ANNEALING ON THE MACROSCOPIC DIMENSION AND LATTICE-PARAMETER OF HEAVILY NEUTRON-IRRADIATED SILICON-CARBIDE
    MIYAZAKI, H
    SUZUKI, T
    YANO, T
    ISEKI, T
    JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 1992, 29 (07) : 656 - 663