ANDERSON LOCALIZATION IN SILICON MOS INVERSION-LAYERS IN A STRONGLY LOCALIZED REGIME

被引：2

作者：

HOSHI, N ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

关键词：

D O I：

10.1016/0039-6028(82)90584-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：189 / 193

页数：5

共 18 条

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ANDERSON, PW
LICCIARDELLO, DC
RAMAKRISHNAN, TV
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[2] HALL-EFFECT IN INVERSION LAYERS
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[3] POSSIBLE EXPLANATION OF NON-LINEAR CONDUCTIVITY IN THIN-FILM METAL WIRES
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ABRAHAMS, E
RAMAKRISHNAN, TV
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[4] CONDUCTION MECHANISMS IN BANDTAILS AT SI-SIO2 INTERFACE
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[J]. SURFACE SCIENCE, 1976, 58 (01) : 60 - 70
[5] THEORY OF WEAKLY LOCALIZED REGIME OF THE ANDERSON LOCALIZATION IN 2-DIMENSIONS
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[J]. SURFACE SCIENCE, 1982, 113 (1-3) : 489 - 504
[6] FUKUYAMA H, 1980, J PHYS SOC JPN, V48, P1841, DOI 10.1143/JPSJ.48.1841
[7] HIKAMI S, 1980, PROG THEOR PHYS, V63, P707, DOI 10.1143/PTP.63.707
[8] NEGATIVE MAGNETORESISTANCE IN SILICON(100) MOS INVERSION-LAYERS
KAWAGUCHI, Y
KAWAJI, S
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (02) : 699 - 700
[9] NEGATIVE MAGNETORESISTANCE IN ANDERSON LOCALIZATION OF SI MOS INVERSION-LAYERS
KAWAGUCHI, Y
KAWAJI, S
[J]. SURFACE SCIENCE, 1982, 113 (1-3) : 505 - 509
[10] Kawaguchi Y., 1980, Journal of the Physical Society of Japan, V49, P983