MAGNETIC-RESONANCE STUDIES OF TELLURIUM-DOPED ALXGA1-XAS

被引：5
作者：
SURMA, M
ZYTKIEWICZ, Z
FRONC, K
GODLEWSKI, M
STALLINGA, P
MONEMAR, B
机构：
[1] UNIV AMSTERDAM,VANDERWAALS ZEEMAN LAB,1018 XE AMSTERDAM,NETHERLANDS
[2] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.50.2645
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x = 0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion of the DX centers into the shallow Te donor states are presented. The mechanism of an enhanced photosensitivity Of the Te-related electron-spin-resonance signal in AlxGa1-xAs is discussed. The observed anisotropy of the signal allows us to estimate the A1-E valley-orbit splitting for Te donor. The ODMR experiment indicates that the E-symmetry state of the Te donor participates in electron trapping to the A1 ground state.
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收藏
页码：2645 / 2648
页数：4
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