STATES AT EPITAXIAL NISI2/SI HETEROJUNCTIONS STUDIED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY AND HYDROGENATION

被引：20

作者：

CHANTRE, A ^{[1
]}

LEVI, AFJ ^{[1
]}

TUNG, RT ^{[1
]}

DAUTREMONTSMITH, WC ^{[1
]}

ANZLOWAR, M ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1986年 / 34卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.34.4415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4415 / 4418

页数：4

共 19 条

[1]

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[6] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

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[7] P-TYPE SURFACE-LAYERS ON N-TYPE SILICON HEAT-CLEANED IN UHV [J].

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JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (11) :1316-1320

[8] HYDROGENATION AND DEHYDROGENATION OF AMORPHOUS AND CRYSTALLINE SILICON [J].

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APPLIED PHYSICS LETTERS, 1978, 32 (07) :439-441

[9] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

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BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1100-1102

[10]

PEARTON SJ, 1986, P MAT RES SOC, V59, P459

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