PHOTOINDUCED MID-GAP ABSORPTION AND TRANSIENT PHOTOCONDUCTIVITY IN THE A-SI-H SYSTEM

被引:4
作者
KIRBY, PB
PAUL, W
机构
关键词
D O I
10.1016/0022-3093(83)90618-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:453 / 456
页数:4
相关论文
共 5 条
[1]  
KIRBY PB, UNPUB
[2]  
KIRBY PB, UNPUB PHYS REV B, V15
[3]   TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J].
ORENSTEIN, J ;
KASTNER, MA ;
VANINOV, V .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01) :23-62
[4]   TRAPPING PARAMETERS OF DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].
STREET, RA .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1060-1062
[5]   ROLE OF DANGLING-BOND DEFECTS IN EARLY RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J].
WAKE, DR ;
AMER, NM .
PHYSICAL REVIEW B, 1983, 27 (04) :2598-2601