MEASUREMENT OF NEGATIVE DIFFERENTIAL MOBILITY OF ELECTRONS IN GAAS

被引：67

作者：

GUNN, JB

ELLIOTT, BJ

机构：

来源：

PHYSICS LETTERS | 1966年 / 22卷 / 04期

关键词：

D O I：

10.1016/0031-9163(66)91182-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：369 / +

页数：1

共 9 条

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[8] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J].

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[9] POSSIBILITY OF NEGATIVE RESISTANCE EFFECTS IN SEMICONDUCTORS [J].

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