DETERMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO GALLIUM SELF-DIFFUSION IN GAAS

被引：29
|
作者：
TAN, TY
YU, S
GOSELE, U
机构：
[1] Department of Mechanical Engineering and Materials Science, Duke University, Durham
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 09期
关键词：
D O I：
10.1063/1.349048
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A quantitative determination of the contributions of the triply negatively charged Ga vacancies (V(Ga)3-) and of the doubly positively charged Ga self-interstitials (I(Ga)2+) to the Ga self-diffusion coefficient in GaAs has been carried out. Under thermal equilibrium and intrinsic conditions, the V(Ga)3- contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the I(Ga)2+ contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals.
引用
收藏
页码：4823 / 4826
页数：4
相关论文
共 50 条
  • [31] SELF-DIFFUSION IN GALLIUM-ARSENIDE
    PALFREY, HD
    BROWN, M
    WILLOUGHBY, AFW
    JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) : 863 - 877
  • [32] Electronic and structural properties of vacancy and self-interstitial defects in germanium
    Janotti, A
    Baierle, R
    da Silva, AJR
    Mota, R
    Fazzio, A
    PHYSICA B-CONDENSED MATTER, 1999, 273-4 : 575 - 578
  • [33] Electronic and structural properties of vacancy and self-interstitial defects in germanium
    Janotti, A.
    Baierle, R.
    Da Silva, Antônio J. R.
    Mota, R.
    Fazzio, A.
    Physica B: Condensed Matter, 1999, 273 : 575 - 578
  • [34] Vacancy dislocation loops in zirconium and their interaction with self-interstitial atoms
    Kulikov, D
    Hou, M
    JOURNAL OF NUCLEAR MATERIALS, 2005, 342 (1-3) : 131 - 140
  • [35] Vacancy and self-interstitial concentration incorporated into growing silicon crystals
    Voronkov, VV
    Falster, R
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 5975 - 5982
  • [36] On the interaction between a vacancy and self-interstitial atom clusters in metals
    Puigvi, M. A.
    De Diego, N.
    Serra, A.
    Osetsky, Yu. N.
    Bacon, D. J.
    PHILOSOPHICAL MAGAZINE, 2007, 87 (23) : 3501 - 3517
  • [37] Temperature dependence of vacancy/self-interstitial recombination volumes in copper
    Mwungeli, John C.
    Liu, Tung Yan
    Demkowicz, Michael J.
    PHYSICAL REVIEW MATERIALS, 2025, 9 (02):
  • [38] MECHANISMS OF DOPING-ENHANCED SUPERLATTICE DISORDERING AND OF GALLIUM SELF-DIFFUSION IN GAAS
    TAN, TY
    GOSELE, U
    APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1240 - 1242
  • [39] Collective contributions to self-diffusion in liquids
    Malomuzh, N. P.
    Shakun, K. S.
    PHYSICS-USPEKHI, 2021, 64 (02) : 157 - 174
  • [40] Self-interstitial in diamond
    Davies, G
    Smith, H
    Kanda, H
    PHYSICAL REVIEW B, 2000, 62 (03): : 1528 - 1531
12345