DETERMINATION OF VACANCY AND SELF-INTERSTITIAL CONTRIBUTIONS TO GALLIUM SELF-DIFFUSION IN GAAS

被引：29
|
作者：
TAN, TY
YU, S
GOSELE, U
机构：
[1] Department of Mechanical Engineering and Materials Science, Duke University, Durham
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 09期
关键词：
D O I：
10.1063/1.349048
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A quantitative determination of the contributions of the triply negatively charged Ga vacancies (V(Ga)3-) and of the doubly positively charged Ga self-interstitials (I(Ga)2+) to the Ga self-diffusion coefficient in GaAs has been carried out. Under thermal equilibrium and intrinsic conditions, the V(Ga)3- contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the I(Ga)2+ contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals.
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页码：4823 / 4826
页数：4
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