NUCLEATION OF HOMOEPITAXIAL FILMS GROWN WITH ION ASSISTANCE ON PT(111)

被引：44
作者：
ESCH, S
BOTT, M
MICHELY, T
COMSA, G
机构：
[1] Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 21期
关键词：
D O I：
10.1063/1.115165
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The nucleation of Pt films grown by ion beam assisted deposition on Pt(lll) has been studied by scanning tunneling microscopy. At temperatures T greater than or equal to 200 K, the simultaneous ion bombardment during vapor phase deposition leads to a substantial increase in the island number density caused by nucleation at ion impact induced adatom clusters. This increase is observed even in the higher temperature range where after ion bombardment alone the ion impact induced adatom clusters are no longer present. (C) 1995 American Institute of Physics.
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页码：3209 / 3211
页数：3
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