ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE

被引：25

作者：

BSIESY, A

MULLER, F

MIHALCESCU, I

LIGEON, M

GASPARD, F

HERINO, R

ROMESTAIN, R

VIAL, JC

机构：

[1] Laboratoire de Spectrométrie Physique associé au CNRS (URA 08), Université Joseph Fourier de Grenoble, 38402 Saint Martin d'Heres Cedex

来源：

JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(93)90101-R

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Visible photoluminescence (PL) of porous silicon is found to be completely quenched by the application of a cathodic polarization. Cathodically biased lightly doped n-type porous layers in contact with an aqueous solution exhibit reversible, complete and energy-selective quenching for a polarization variation of only about 500 mV. A spectral blueshift along with a narrowing of the line width accompanies the observed strong PL quenching. It results from a selective quenching starting by the low luminescence energy and reaching progressively the high luminescence energy as the cathodic polarization is increased.

引用

页码：29 / 32

页数：4

共 9 条

[1] PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS [J].

BSIESY, A ;

VIAL, JC ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MULLER, F ;

ROMESTAIN, R ;

WASIELA, A ;

HALIMAOUI, A ;

BOMCHIL, G .

SURFACE SCIENCE, 1991, 254 (1-3) :195-200

[2] VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE [J].

BSIESY, A ;

MULLER, F ;

LIGEON, M ;

GASPARD, F ;

HERINO, R ;

ROMESTAIN, R ;

VIAL, JC .

PHYSICAL REVIEW LETTERS, 1993, 71 (04) :637-640

[3]

CALCOTT PDJ, 1993, MRS 92 P, P283

[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[5] ELECTROLUMINESCENCE IN THE VISIBLE RANGE DURING ANODIC-OXIDATION OF POROUS SILICON FILMS [J].

HALIMAOUI, A ;

OULES, C ;

BOMCHIL, G ;

BSIESY, A ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MULLER, F .

APPLIED PHYSICS LETTERS, 1991, 59 (03) :304-306

[6] POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].

LEHMANN, V ;

GOSELE, U .

APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858

[7]

MENDEZ EE, 1982, PHYS REV B, V26, P71101

[8] SPECTRAL DEPENDENCE OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE ON MINORITY-CARRIER CONCENTRATION IN THE N-GAP/ELECTROLYTE SYSTEM [J].

SMANDEK, B ;

GERISCHER, H .

ELECTROCHIMICA ACTA, 1985, 30 (08) :1101-1107

[9] MECHANISMS OF VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON [J].

VIAL, JC ;

BSIESY, A ;

GASPARD, F ;

HERINO, R ;

LIGEON, M ;

MULLER, F ;

ROMESTAIN, R ;

MACFARLANE, RM .

PHYSICAL REVIEW B, 1992, 45 (24) :14171-14176

← 1 →