SOLID LIQUID INTERFACE IN THE GROWTH OF SILLENITE-TYPE CRYSTALS

被引：16

作者：

MARTINEZLOPEZ, J ^{[1
]}

CABALLERO, MA ^{[1
]}

SANTOS, MT ^{[1
]}

ARIZMENDI, L ^{[1
]}

DIEGUEZ, E ^{[1
]}

机构：

[1] AUTONOMOUS UNIV MADRID,DEPT APPL PHYS,E-28049 MADRID,SPAIN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(07)80057-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single crystals of Bi12SiO20 and Bi12GeO20 have been grown with the Czochralski technique using a diameter control system. The relationship between the growth parameters - in particular the axial temperature profile and the rotation rate - and the shape of the solid-liquid interface has been examined by growing the crystals under various conditions and using both RF and resistance heaters.

引用

页码：852 / 858

页数：7

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