THE INFLUENCE OF WATER-VAPOR ON THE SELECTIVE LOW-PRESSURE CVD OF COPPER

被引：0

作者：

LECOHIER, B

PHILIPPOZ, JM

CALPINI, B

STUMM, T

VANDENBERGH, H

机构：

来源：

JOURNAL DE PHYSIQUE IV | 1991年 / 1卷 / C2期

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中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Low pressure CVD of copper from its bis-hexafluoroacetylacetonate is studied on oxidized silicon substrates locally seeded with a 2.5 angstrom platinum prenucleation film. Copper is deposited selectively on top of the prenucleation layer from the gaseous metalorganic compound diluted in hydrogen. The selectivity, growth rate and resistivity of the copper deposit strongly depend on the presence of water vapor in the reagent gas mixture.

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页码：279 / 286

页数：8

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