RAPID CAPLESS ANNEALING OF SI-28, ZN-64, AND BE-9 IMPLANTS IN GAAS

被引：14

作者：

LIU, SG

NARAYAN, SY

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 06期

关键词：

D O I：

10.1007/BF02655306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：897 / 911

页数：15

共 9 条

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[6]

LIU SG, 1980, RCA REV, V41, P227

[7]

LIU SG, 1978, AIP C P, V50, P603

[8] ANNEALING OF ION-IMPLANTED GAAS IN A CONTROLLED ATMOSPHERE [J].

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WHELAN, JM .

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[9] THIN-FILM ENCAPSULANTS FOR ANNEALING GAAS AND INP [J].

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