MODULATION SPECTROSCOPY UNDER UNIAXIAL STRESS

被引：105

作者：

POLLAK, FH ^{[1
]}

机构：

[1] YESHIVA UNIV, BELFER GRAD SCH SCI, DEPT PHYS, NEW YORK, NY 10033 USA

来源：

SURFACE SCIENCE | 1973年 / 37卷 / 01期

关键词：

D O I：

10.1016/0039-6028(73)90375-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：863 / 895

页数：33

共 58 条

[41] PIEZO-OPTICAL EVIDENCE FOR LAMBDA TRANSITIONS AT 3.4-EV OPTICAL STRUCTURE OF SILICON [J].

POLLAK, FH ;

RUBLOFF, GW .

PHYSICAL REVIEW LETTERS, 1972, 29 (12) :789-&

[42] PIEZOELECTROREFLECTANCE IN GAAS [J].

POLLAK, FH ;

CARDONA, M ;

SHAKLEE, KL .

PHYSICAL REVIEW LETTERS, 1966, 16 (21) :942-&

[43] PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI [J].

POLLAK, FH ;

CARDONA, M .

PHYSICAL REVIEW, 1968, 172 (03) :816-&

[44]

POLLAK FH, 1966, J PHYS SOC JPN, VS 21, P20

[45] EFFECTS OF UNIAXIAL STRESS ON FREE AND BOUND EXCITON IN GASB AT 1.7 DEGREES K [J].

POLLAK, FH ;

AGGARWAL, RL .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :432-&

[46]

POLLAK FH, 1970, 10 P INT C PHYS SEM

[47] CALCULATION OF EXCHANGE ENERGY FOR EXCITONS IN 2-BODY MODEL [J].

ROHNER, PG .

PHYSICAL REVIEW B, 1971, 3 (02) :433-&

[48] STRESS-INDUCED EXCHANGE SPLITTING OF HYPERBOLIC EXCITONS IN GAAS [J].

ROWE, JE ;

POLLAK, FH ;

CARDONA, M .

PHYSICAL REVIEW LETTERS, 1969, 22 (18) :933-&

[49] STRAIN-SPLIT ENERGY BANDS IN SEMICONDUCTORS - GE [J].

SARAVIA, LR ;

BRUST, D .

PHYSICAL REVIEW, 1969, 178 (03) :1240-&

[50] SHUBNIKOV-DE HAAS EFFECT UNDER STRESS - NEW TOOL FOR DETERMINING DEFORMATION POTENTIALS AND BAND-STRUCTURE INFORMATION [J].

SEILER, DG ;

HATHCOX, KL .

PHYSICAL REVIEW LETTERS, 1972, 29 (10) :647-+

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