TRANSPARENT AND CONDUCTIVE IMPURITY-DOPED GAN THIN-FILMS PREPARED BY AN ELECTRON-CYCLOTRON-RESONANCE PLASMA METALORGANIC CHEMICAL-VAPOR-DEPOSITION METHOD

Transparent and conductive doped GaN thin films have been prepared on glass substrates by the metalorganic chemical vapor deposition method utilizing electron cyclotron resonance plasma. Highly transparent oxygen-, silicon-, and titanium-doped GaN thin films with resistivities of 1.8 X 10(-2), 3.8 X 10(-2), and 8.7 X 10(-3) Omega cm, respectively, were prepared at 350 degrees C using triethylgallium and ammonia (NH3) as source gases. Carrier concentrations above 2 X 10(20) cm(-3) were obtained for all three types of GaN thin films doped with each impurity. These GaN thin films exhibited excellent thermal and chemical stability in various gas environments up to 350 degrees C and chemical stability in either acid or basic solutions depending on the dopant used.