PLANAR VIBRATIONAL-MODES IN SUPERLATTICES

被引：37

作者：

SHANABROOK, BV

BENNETT, BR

WAGNER, RJ

机构：

[1] Naval Research Laboratory, Washington

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.48.17172

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vibrational Raman scattering and x-ray diffraction have been performed on GaSb/InAs superlattices. The composition of the AsxSb1-x plane that connects the InAs and GaSb layers has been varied by controlled growth techniques. When x is equal to 0 or 1, the InAs and GaSb layers are connected with InSb or GaAs bonds, respectively. Planar vibrational modes (PVM's) localized at the interface are observed. The energies of the GaAs-like and InSb-like PVM's are studied as a function of x and are compared with results of a random-element isodisplacement model.

引用

页码：17172 / 17176

页数：5

共 14 条

[11] INTERFACE STUDIES OF INAS/GASB SUPERLATTICES BY RAMAN-SCATTERING [J].