THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .1. PARAMETRIC MODELING AND IMPEDANCE ANALYSIS

被引：43

作者：

ALLEN, KD

SAWIN, HH

MOCELLA, MT

JENKINS, MW

机构：

[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139

[2] DUPONT CO,FREON PROD LAB,WILMINGTON,DE 19898

[3] DUPONT CO,DEPT ENGN,WILMINGTON,DE 19898

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 11期

关键词：

D O I：

10.1149/1.2108400

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2315 / 2325

页数：11

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