LASER-RECRYSTALLIZED POLYCRYSTALLINE SILICON RESISTORS FOR INTEGRATED-CIRCUIT APPLICATIONS

被引：12

作者：

SCHABER, H

CUTTER, D

BINDER, J

OBERMEIER, E

机构：

[1] SIEMENS AG, UNTERNEHMENSBEREICH BAUELEMENTE, D-8000 MUNICH 80, FED REP GER

[2] FRAUNHOFER INST FESTKORPERTECHNOL, D-8000 MUNCHEN 60, FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.332620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4633 / 4640

页数：8

共 18 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2] TEMPERATURE COEFFICIENT OF RESISTIVITY OF SILICON AND GERMANIUM NEAR ROOM TEMPERATURE [J].

BULLIS, WM ;

BREWER, FH ;

KOLSTAD, CD ;

SWARTZEN.LJ .

SOLID-STATE ELECTRONICS, 1968, 11 (07) :639-&

[3]

Fastow R. M., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P495

[4] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS [J].

GAT, A ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :142-144

[5] ZONE-MELTING RECRYSTALLIZATION OF ENCAPSULATED SILICON FILMS ON SIO2 - MORPHOLOGY AND CRYSTALLOGRAPHY [J].

GEIS, MW ;

SMITH, HI ;

TSAUR, BY ;

FAN, JCC ;

MABY, EW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :158-160

[6]

GIBBONS JF, 1981, LASER ELECTRON BEAM, P449

[7] USE OF INCOHERENT-LIGHT FOR ANNEALING IMPLANTED SI WAFERS AND GROWING SINGLE-CRYSTAL SI ON SIO2 [J].

HAOND, M ;

VU, DP .

ELECTRONICS LETTERS, 1982, 18 (17) :727-728

[8] PULSED-ELECTRON-BEAM ANNEALING OF POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI ;

GREENWALD, AC .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :282-285

[9] SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS [J].

LAM, HW ;

PINIZZOTTO, RF ;

TASCH, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :1981-1986

[10] ELECTRICAL CHARACTERISTICS OF THE INTERFACE BETWEEN LASER-RECRYSTALLIZED POLYCRYSTALLINE SILICON AND THE UNDERLYING INSULATOR [J].

LE, HP ;

LAM, HW .

ELECTRON DEVICE LETTERS, 1982, 3 (06) :161-163

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