SURFACE STATE DENSITY VARIATIONS ON MOS STRUCTURES DUE TO GAMMA RADIATION

被引：5
作者：
MATTAUCH, RJ
LADE, RW
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 11期
关键词：
D O I：
10.1109/PROC.1965.4365
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1748 / +
页数：1
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