INSITU TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DISLOCATION LOOPS INDUCED BY P-IMPLANTATION IN CDTE SINGLE-CRYSTALS

被引：14

作者：

LEO, G ^{[1
]}

RUAULT, MO ^{[1
]}

机构：

[1] UNIV LECCE, I-73100 LECCE, ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.353127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed in situ transmission electron microscopy observations during room-temperature 100 keV P ion implantation in CdTe single crystals up to 10(15) p/cm2 Beyond a defect-depleted zone whose thickness increases with the total fluence, interstitial loops lying in a {110} plane were observed. At least two Burgers' vector types ([100] and [110]) were determined. The results are explained in terms of the high interstitial defect mobility.

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页码：2234 / 2238

页数：5

相关论文

共 17 条

[1] STRUCTURE OF ION-IMPLANTED AND ANNEALED HG1-XCDXTE [J].

BAHIR, G ;

KALISH, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3129-3140

[2] STUDY OF AL ION-IMPLANTATION IN HG0.3CD0.7TE [J].

BLANCHARD, C ;

BARBOT, JF ;

CAHOREAU, M ;

DESOYER, JC ;

LESCOUL, D ;

DESSUS, JL .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 47 (01) :15-21

[3] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE [J].

BUBULAC, LO ;

TENNANT, WE ;

RIEDEL, RA ;

MAGEE, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :251-254

[4] DEFECTS, DIFFUSION AND ACTIVATION IN ION-IMPLANTED HGCDTE [J].

BUBULAC, LO .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :723-734

[5] ELECTRICAL DOPING OF HGCDTE BY ION-IMPLANTATION AND HEAT-TREATMENT [J].

DESTEFANIS, GL .

JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :700-722

[6] ELECTRICAL ACTIVITY AND RADIATION DAMAGE IN ION IMPLANTED CADMIUM TELLURIDE. [J].

Gettings, M. ;

Stephens, K.G. .

Radiation Effects, 1974, 22 (01) :53-62

[7] STUDY OF DISLOCATION LOOPS GROWTH IN CDTE UNDER HIGH-VOLTAGE ELECTRON-IRRADIATION [J].

GUE, AM ;

MAZEL, A .

JOURNAL DE PHYSIQUE, 1988, 49 (01) :53-61

[8] DEFECT STRUCTURE OF CDTE [J].

KROGER, FA .

REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :205-210

[9] ION CHANNELING STUDY OF P-IMPLANTATION DAMAGE IN CDTE [J].

LEO, G ;

TRAVERSE, A ;

RUAULT, MO ;

DRIGO, AV .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 63 (1-2) :41-46

[10]

LEO G, 1992, IN PRESS NUCL IN MAY