CIRCUIT SIMULATION-MODELS FOR THE HIGH ELECTRON-MOBILITY TRANSISTOR

被引：35

作者：

YEAGER, HR ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,LABS,HIGH SPEED DEVICES LAB,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 05期

关键词：

D O I：

10.1109/T-ED.1986.22552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：682 / 692

页数：11

共 19 条

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[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

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[9]

LEE CP, 1983, JUN DEV RES C BURL

[10]

LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

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