A TUNABLE CMOS-DRAM VOLTAGE LIMITER WITH STABILIZED FEEDBACK-AMPLIFIER

被引:15
作者
HORIGUCHI, M
AOKI, M
ETOH, J
TANAKA, H
IKENAGA, S
ITOH, K
KAJIGAYA, K
KOTANI, H
OHSHIMA, K
MATSUMOTO, T
机构
[1] HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
[2] HITACHI LTD,CTR DEVICE DEV,OHME,TOKYO,JAPAN
关键词
D O I
10.1109/4.62133
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents two developments for a CMOS-DRAM voltage limiter: a precise internal-voltage generator, and a stabilized driver composed of a feedback amplifier with compensation. The voltage limiter’s features include generating a PMOS-VT difference, being capable of voltage tuning with fuse trimming, and compensation in the driver circuit through zero insertion. It provides a voltage insusceptible to supply-voltage and substrate-voltage bouncings, temperature variation, and process fluctuation, while ensuring the feedback-loop stability with a phase margin of 55° for a time-dependent load of DRAM circuit. The proposed circuits are experimentally evaluated through their implementation in a 16-Mb CMOS DRAM. A temperature dependency of 1.4 mV/°C and a voltage deviation within ± 10% for process fluctuation are achieved. The voltage is stabilized within ±3% for Vcc bounce and ± 10% for memory operation. © 1990 IEEE
引用
收藏
页码:1129 / 1135
页数:7
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