SPACE-CHARGE LIMITED CONDUCTION IN GEXSE100-X

被引：26
|
作者：
KUMAR, A
KUMAR, S
ARORA, R
机构：
[1] Department of Physics, Harcourt Butler Technological Institute, Kanpur
来源：
SOLID STATE COMMUNICATIONS | 1991年 / 78卷 / 07期
关键词：
D O I：
10.1016/0038-1098(91)90395-C
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The present paper reports the measurements on space charge limited conduction in vacuum evaporated thin films of Ge(x)Se100-x where 5 less-than-or-equal-to x less-than-or-equal-to 40. Current, at high fields (10(4) V cm-1), could be fitted to the theory of space charge limited conduction in case of an uniform distribution of localized states in the mobility gap of these materials. The results indicate that a minimum density of localized states occurs at x = 22 which is in agreement with the other experiments reported in the literature.
引用
收藏
页码：651 / 654
页数：4
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