共 15 条
[2]
ARORA R, IN PRESS
[3]
EVIDENCE OF SPACE-CHARGE-LIMITED CURRENT IN AMORPHOUS-SILICON SCHOTTKY DIODES
[J].
ELECTRON DEVICE LETTERS,
1980, 1 (10)
:200-202
[5]
DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
[J].
JOURNAL DE PHYSIQUE,
1981, 42 (NC4)
:451-454
[7]
GREKOV EV, 1988, SOV PHYS SEMICOND+, V22, P457
[8]
STEADY-STATE AND TRANSIENT PHOTOCONDUCTIVITY IN AMORPHOUS THIN-FILMS OF GEXSE100-X
[J].
PHYSICAL REVIEW B,
1988, 38 (18)
:13432-13435
[9]
THE DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1982, 46 (04)
:377-389
[10]
INFLUENCE OF NITROGEN INCORPORATION ON THE DENSITY OF GAP STATES IN AMORPHOUS HYDROGENATED SILICON
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1987, 55 (03)
:417-426