MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES

被引：1253

作者：

MCINTYRE, RJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 01期

关键词：

D O I：

10.1109/T-ED.1966.15651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：164 / +

页数：1

共 11 条

[1] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[2] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J].

BATDORF, RL ;

CHYNOWETH, AG ;

DACEY, GC ;

FOY, PW .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) :1153-1160

[3] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].

GOETZBERGER, A ;

SCARLETT, RM ;

HAITZ, RH ;

MCDONALD, B .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+

[4] NOISE THEORY FOR READ TYPE AVALANCHE DIODE [J].

HINES, ME .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :158-&

[5] HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE [J].

JOHNSON, KM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) :55-+

[6] A SILICON DIODE MICROWAVE OSCILLATOR [J].

JOHNSTON, RL ;

DELOACH, BC ;

COHEN, BG .

BELL SYSTEM TECHNICAL JOURNAL, 1965, 44 (02) :369-+

[7] TECHNOLOGICAL DEVELOPMENTS EVOLVING FROM RESEARCH ON READ DIODES [J].

LEE, CA ;

BATDORF, RL ;

WIEGMANN, W ;

KAMINSKY, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :175-+

[8] AN AVALANCHING SILICON DIODE MICROWAVE AMPLIFIER [J].

NAPOLI, LS ;

IKOLA, RJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09) :1231-&

[9] A PROPOSED HIGH-FREQUENCY, NEGATIVE-RESISTANCE DIODE [J].

READ, WT .

BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (02) :401-446

[10]

TAGER AS, 1965, FIZ TVERD TELA+, V6, P1919

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