MODIFIED MULTIQUANTUM BARRIER FOR 600 NM RANGE ALGAINP LASERS

被引：18

作者：

TAKAGI, T

KOYAMA, F

IGA, K

机构：

[1] OMRON Corp., Nagaokakyo, Kyoto

[2] Tokyo Institute of Technology, Midori-ku, Yokohama, 4259 Nagatsuta

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 12期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new multiquantum barrier (MQB) to obtain a large potential cladding for visible AlGaInP lasers is proposed. The effective potential barrier enhanced by the MQB concept can be increased by constructing the MQB well layer with a smaller energy gap material rather than that of the active layer. Even for 600 nm range lasers, the actual potential barrier height which electrons in the active layer feel under biased condition can be bigger than 200 meV.

引用

页码：1081 / 1082

页数：2