EPITAXIAL-GROWTH OF PLATINUM SILICIDE LAYERS ON (111) SI SUBSTRATES

被引：10

作者：

CHEN, JR ^{[1
]}

HEH, TS ^{[1
]}

LIN, MP ^{[1
]}

机构：

[1] NATL TSINGHUA UNIV,DEPT MAT SCI & ENGN,HSINCHU 300,TAIWAN

来源：

关键词：

D O I：

10.1016/0039-6028(85)90963-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：657 / 662

页数：6

共 6 条

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CHEN, LJ
CHANG, TT
[J]. THIN SOLID FILMS, 1983, 104 (1-2) : 183 - 189
[2] ELABD H, 1982, RCA REV, V43, P569
[3] KAWARADA H, 1984, THIN FILMS INTERFACE, V2, P429
[4] THE OXYGEN EFFECT IN THE GROWTH-KINETICS OF PLATINUM SILICIDES
NAVA, F
VALERI, S
MAJNI, G
CEMBALI, A
PIGNATEL, G
QUEIROLO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6641 - 6646
[5] THERMAL-STABILITY OF THIN PTSI FILMS ON SILICON SUBSTRATES
SINHA, AK
SHENG, TT
MARCUS, RB
HASZKO, SE
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3637 - +
[6] YOKOTA Y, 1984, THIN FILMS INTERFACE, V2, P435