PROPERTIES OF BORON-DOPED EPITAXIAL DIAMOND FILMS

被引：135

作者：

FUJIMORI, N

NAKAHATA, H

IMAI, T

机构：

[1] Itami Research Laboratories, Sumitomo Electric Industries Ltd., Ltami, Hyogo, 664, 1-1, 1-chome, Koyakita

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 05期

关键词：

Activation energy; Carrier concentration; Carrier mobility; CVD; Hall effect; Diamond; Epitaxial growth; P-type semiconductor;

D O I：

10.1143/JJAP.29.824

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron-doped homo-epitaxial films were deposited by microwave plasma CVD on synthesized single-crystal diamonds. Boron concentration in the films was determined by the boron concentration in the reactant gases. The crystallinity of boron- doped films was found to be affected by the boron concentration in the reactant gases. The conductivity of boron doped films was determined by the concentration of boron, and the activation energy was nearly the same as for natural IIb diamonds. The effect of the surface orientation of substrates was found in the conductivity of highly doped films. The result of the Hall effect measurement indicated that the mobility of boron-doped diamond epitaxial films was 70 cm2/V·s even at 500°C. © 1990 The Japan Society of Applied Physics.

引用

页码：824 / 827

页数：4

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