DOPING PROFILES BY MOSFET DEEP DEPLETION C(V)

被引：15

作者：

BROWN, DM ^{[1
]}

CONNERY, RJ ^{[1
]}

GRAY, PV ^{[1
]}

机构：

[1] GE,SCHENECTADY,NY 12301

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 01期

关键词：

D O I：

10.1149/1.2134137

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：121 / 127

页数：7

共 14 条

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[10] LIMITATION OF PULSED CAPACITANCE TECHNIQUE OF MEASURING IMPURITY PROFILES [J].

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