ON 1/F NOISE AND DETECTIVITY IN REVERSE-BIASED PARA NORMAL-JUNCTION PHOTO-DIODES

被引:23
作者
KLEINPENNING, TGM
机构
来源
PHYSICA B & C | 1983年 / 121卷 / 1-2期
关键词
D O I
10.1016/0378-4363(83)90129-8
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:81 / 88
页数:8
相关论文
共 16 条
  • [1] ON EXPRESSIONS FOR 1/F NOISE IN MOBILITY
    HOOGE, FN
    [J]. PHYSICA B & C, 1982, 114 (03): : 391 - 392
  • [2] EXPERIMENTAL STUDIES ON 1-F NOISE
    HOOGE, FN
    KLEINPENNING, TGM
    VANDAMME, LKJ
    [J]. REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) : 479 - 532
  • [3] 1-F NOISE IN THERMO EMF OF INTRINSIC AND EXTRINSIC SEMICONDUCTORS
    KLEINPENNING, TG
    [J]. PHYSICA, 1974, 77 (01): : 78 - 98
  • [4] 1-F NOISE IN P-N DIODES
    KLEINPENNING, TGM
    [J]. PHYSICA B & C, 1980, 98 (04): : 289 - 299
  • [5] KRUSE PW, 1977, TOPICS APPLIED PHYSI, V19
  • [6] NOISE IN REVERSE-BIASED HGCDTE PHOTO-DIODES FOR WIDEBAND APPLICATIONS
    LUNDQVIST, S
    EKLUND, H
    ENG, ST
    [J]. INFRARED PHYSICS, 1980, 20 (04): : 237 - 243
  • [7] MARTIN TL, 1970, ELECTRONS CRYSTALS
  • [8] HIGH DETECTIVITY PBXSN1-XTE PHOTOVOLTAIC DIODES
    ROLLS, WH
    EDDOLLS, DV
    [J]. INFRARED PHYSICS, 1973, 13 (02): : 143 - 147
  • [9] SZE SM, 1969, PHYSICS SEMICONDUCTO
  • [10] Tauc J., 1962, FOTO THERMOELECTRIC, P248