RF CMOS modeling: a scalable model of RF-MOSFET with different numbers of fingers

A novel scalable model for multi-finger RF MOSFETs modeling is presented. All the parasitic components, including gate resistance, substrate resistance and wiring capacitance, are directly determined from the layout. This model is further verified using a standard 0.13 mu m RF CMOS process with nMOSFETs of different numbers of gate fingers, with the per gate width fixed at 2.5 mu m and the gate length at 0.13 mu m. Excellent agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.