NUCLEATION OF MISFIT DISLOCATIONS IN IN0.2GA0.8AS EPILAYERS GROWN ON GAAS SUBSTRATES

被引：14

作者：

CHEN, Y ^{[1
]}

LILIENTALWEBER, Z ^{[1
]}

WASHBURN, J ^{[1
]}

KLEM, JF ^{[1
]}

TSAO, JY ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 04期

关键词：

D O I：

10.1063/1.114069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Misfit dislocation arrays in In0.2Ga0.8As epilayers grown on GaAs substrates tilted 2°-10°away from exact (001) toward varied directions have been studied by transmission electron microscopy. A method has been developed to determine the glide plane and the Burgers vector of each misfit dislocation in the tilted InGaAs/GaAs interfaces. Based on experimental observations and theoretical analyses, it is proposed that a stacking fault surrounded by a 30°partial is at first generated by a growth error, followed by thermally activated nucleation of a 90°partial dislocation that removes the stacking fault and forms a 60°dislocation. From the frequency of nucleation events versus the dislocation glide force, the energy barrier for dislocation nucleation of α and β 90°partial dislocations was determined to be equal to 1.5 and 1.4 eV, respectively. © 1995 American Institute of Physics.

引用

页码：499 / 501

页数：3

共 14 条

[1]

ADACHI S, 1992, PHYSICAL PROPERTIES

[2]

[Anonymous], 1982, THEORY DISLOCATIONS

[3] STRUCTURE AND LOCATION OF MISFIT DISLOCATIONS IN INGAAS EPILAYERS GROWN ON VICINAL GAAS(001) SUBSTRATES [J].