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NONEXPONENTIALITY IN PHOTOINDUCED CURRENT TRANSIENTS IN UNDOPED SEMIINSULATING GALLIUM-ARSENIDE
被引:12
作者
:
GIRI, PK
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Indian Institute of Technology
GIRI, PK
MOHAPATRA, YN
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Indian Institute of Technology
MOHAPATRA, YN
机构
:
[1]
Department of Physics, Indian Institute of Technology
来源
:
JOURNAL OF APPLIED PHYSICS
|
1995年
/ 78卷
/ 01期
关键词
:
D O I
:
10.1063/1.360668
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
An isothermal spectroscopic technique called time-analyzed transient spectroscopy (TATS) has been used to study photoinduced current transients in undoped semi-insulating GaAs. It is demonstrated that this has many advantages over conventionally used photoinduced transient spectroscopy (PITS). Specifically, TATS provides both quantitative measure and qualitative insights to the nonexponentiality of current transients commonly encountered in these materials. Using this spectroscopy, features related to enigmatic negative peaks resulting from rising current transients in these materials are reported. A simple kinetic model has been proposed to explain the essential features of rising transients leading to negative peaks in both TATS and PITS spectra. © 1995 American Institute of Physics.
引用
收藏
页码:262 / 268
页数:7
相关论文
共 35 条
[1]
TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS IN SEMIINSULATING GAAS .2. A DIGITAL APPROACH
ABELE, JC
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON GRAD CTR,BEAVERTON,OR 97006
OREGON GRAD CTR,BEAVERTON,OR 97006
ABELE, JC
KREMER, RE
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON GRAD CTR,BEAVERTON,OR 97006
OREGON GRAD CTR,BEAVERTON,OR 97006
KREMER, RE
BLAKEMORE, JS
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON GRAD CTR,BEAVERTON,OR 97006
OREGON GRAD CTR,BEAVERTON,OR 97006
BLAKEMORE, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1987,
62
(06)
: 2432
-
2438
[2]
TEMPERATURE-TIME DUALITY AND DEEP-LEVEL SPECTROSCOPIES
AGARWAL, S
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
AGARWAL, S
MOHAPATRA, YN
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
MOHAPATRA, YN
SINGH, VA
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0
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h-index:
0
机构:
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
SINGH, VA
[J].
JOURNAL OF APPLIED PHYSICS,
1995,
77
(07)
: 3155
-
3161
[3]
INVESTIGATION OF DEEP LEVELS IN HIGH-RESISTIVITY BULK MATERIALS BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY .1. REVIEW AND ANALYSIS OF SOME BASIC PROBLEMS
BALLAND, JC
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr
BALLAND, JC
ZIELINGER, JP
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr
ZIELINGER, JP
NOGUET, C
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr
NOGUET, C
TAPIERO, M
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr
TAPIERO, M
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1986,
19
(01)
: 57
-
70
[4]
INTERPRETATION OF THE ACTIVATION-ENERGY DERIVED FROM A STRETCHED-EXPONENTIAL DESCRIPTION OF DEFECT DENSITY KINETICS IN HYDROGENATED AMORPHOUS-SILICON
BENATAR, LE
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, Stanford University, Stanford
BENATAR, LE
REDFIELD, D
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, Stanford University, Stanford
REDFIELD, D
BUBE, RH
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, Stanford University, Stanford
BUBE, RH
[J].
JOURNAL OF APPLIED PHYSICS,
1993,
73
(12)
: 8659
-
8661
[5]
CHARACTERIZATION OF DEEP LEVELS IN BI12GEO20 BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY
BENJELLOUN, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
BENJELLOUN, N
TAPIERO, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
TAPIERO, M
ZIELINGER, JP
论文数:
0
引用数:
0
h-index:
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UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
ZIELINGER, JP
LAUNAY, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
LAUNAY, JC
MARSAUD, F
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0
引用数:
0
h-index:
0
机构:
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
MARSAUD, F
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(08)
: 4013
-
4023
[6]
METASTABLE DEFECT STRUCTURES IN ELEMENTAL AND COMPOUND SEMICONDUCTORS
BENTON, JL
论文数:
0
引用数:
0
h-index:
0
BENTON, JL
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1989,
18
(02)
: 199
-
206
[7]
INVESTIGATION OF THE NEGATIVE PEAK IN PHOTOINDUCED TRANSIENT SPECTRA OF SEMI-INSULATING GALLIUM-ARSENIDE
BLIGHT, SR
论文数:
0
引用数:
0
h-index:
0
机构:
GEC,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
BLIGHT, SR
THOMAS, H
论文数:
0
引用数:
0
h-index:
0
机构:
GEC,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
THOMAS, H
[J].
JOURNAL OF APPLIED PHYSICS,
1989,
65
(01)
: 215
-
226
[8]
APPLICATION OF THE WILLIAMS WATTS DECAY LAW TO DX CENTER CAPTURE AND EMISSION KINETICS
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CAMPBELL, AC
STREETMAN, BG
论文数:
0
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h-index:
0
STREETMAN, BG
[J].
APPLIED PHYSICS LETTERS,
1989,
54
(05)
: 445
-
447
[9]
Deveaud B., 1980, Semi-Insulating III-V Materials, P241
[10]
IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
ELLIOTT, K
论文数:
0
引用数:
0
h-index:
0
机构:
CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
ELLIOTT, K
CHEN, RT
论文数:
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引用数:
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h-index:
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机构:
CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
CHEN, RT
GREENBAUM, SG
论文数:
0
引用数:
0
h-index:
0
机构:
CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
GREENBAUM, SG
WAGNER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
WAGNER, RJ
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(09)
: 907
-
909
←
1
2
3
4
→
共 35 条
[1]
TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS IN SEMIINSULATING GAAS .2. A DIGITAL APPROACH
ABELE, JC
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON GRAD CTR,BEAVERTON,OR 97006
OREGON GRAD CTR,BEAVERTON,OR 97006
ABELE, JC
KREMER, RE
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON GRAD CTR,BEAVERTON,OR 97006
OREGON GRAD CTR,BEAVERTON,OR 97006
KREMER, RE
BLAKEMORE, JS
论文数:
0
引用数:
0
h-index:
0
机构:
OREGON GRAD CTR,BEAVERTON,OR 97006
OREGON GRAD CTR,BEAVERTON,OR 97006
BLAKEMORE, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1987,
62
(06)
: 2432
-
2438
[2]
TEMPERATURE-TIME DUALITY AND DEEP-LEVEL SPECTROSCOPIES
AGARWAL, S
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
AGARWAL, S
MOHAPATRA, YN
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
MOHAPATRA, YN
SINGH, VA
论文数:
0
引用数:
0
h-index:
0
机构:
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
INDIAN INST TECHNOL,DEPT PHYS,KANPUR 208016,UTTAR PRADESH,INDIA
SINGH, VA
[J].
JOURNAL OF APPLIED PHYSICS,
1995,
77
(07)
: 3155
-
3161
[3]
INVESTIGATION OF DEEP LEVELS IN HIGH-RESISTIVITY BULK MATERIALS BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY .1. REVIEW AND ANALYSIS OF SOME BASIC PROBLEMS
BALLAND, JC
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr
BALLAND, JC
ZIELINGER, JP
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr
ZIELINGER, JP
NOGUET, C
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr
NOGUET, C
TAPIERO, M
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr
TAPIERO, M
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1986,
19
(01)
: 57
-
70
[4]
INTERPRETATION OF THE ACTIVATION-ENERGY DERIVED FROM A STRETCHED-EXPONENTIAL DESCRIPTION OF DEFECT DENSITY KINETICS IN HYDROGENATED AMORPHOUS-SILICON
BENATAR, LE
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, Stanford University, Stanford
BENATAR, LE
REDFIELD, D
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, Stanford University, Stanford
REDFIELD, D
BUBE, RH
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Science and Engineering, Stanford University, Stanford
BUBE, RH
[J].
JOURNAL OF APPLIED PHYSICS,
1993,
73
(12)
: 8659
-
8661
[5]
CHARACTERIZATION OF DEEP LEVELS IN BI12GEO20 BY PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY
BENJELLOUN, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
BENJELLOUN, N
TAPIERO, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
TAPIERO, M
ZIELINGER, JP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
ZIELINGER, JP
LAUNAY, JC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
LAUNAY, JC
MARSAUD, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
UNIV BORDEAUX 1,CNRS,CHIM SOLIDE LAB,F-33405 TALENCE,FRANCE
MARSAUD, F
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(08)
: 4013
-
4023
[6]
METASTABLE DEFECT STRUCTURES IN ELEMENTAL AND COMPOUND SEMICONDUCTORS
BENTON, JL
论文数:
0
引用数:
0
h-index:
0
BENTON, JL
[J].
JOURNAL OF ELECTRONIC MATERIALS,
1989,
18
(02)
: 199
-
206
[7]
INVESTIGATION OF THE NEGATIVE PEAK IN PHOTOINDUCED TRANSIENT SPECTRA OF SEMI-INSULATING GALLIUM-ARSENIDE
BLIGHT, SR
论文数:
0
引用数:
0
h-index:
0
机构:
GEC,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
BLIGHT, SR
THOMAS, H
论文数:
0
引用数:
0
h-index:
0
机构:
GEC,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
THOMAS, H
[J].
JOURNAL OF APPLIED PHYSICS,
1989,
65
(01)
: 215
-
226
[8]
APPLICATION OF THE WILLIAMS WATTS DECAY LAW TO DX CENTER CAPTURE AND EMISSION KINETICS
CAMPBELL, AC
论文数:
0
引用数:
0
h-index:
0
CAMPBELL, AC
STREETMAN, BG
论文数:
0
引用数:
0
h-index:
0
STREETMAN, BG
[J].
APPLIED PHYSICS LETTERS,
1989,
54
(05)
: 445
-
447
[9]
Deveaud B., 1980, Semi-Insulating III-V Materials, P241
[10]
IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS
ELLIOTT, K
论文数:
0
引用数:
0
h-index:
0
机构:
CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
ELLIOTT, K
CHEN, RT
论文数:
0
引用数:
0
h-index:
0
机构:
CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
CHEN, RT
GREENBAUM, SG
论文数:
0
引用数:
0
h-index:
0
机构:
CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
GREENBAUM, SG
WAGNER, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
CUNY HUNTER COLL,DEPT PHYS & ASTRON,NEW YORK,NY 10021
WAGNER, RJ
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(09)
: 907
-
909
←
1
2
3
4
→