GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：88
作者：
FEKETA, D
CHAN, KT
BALLANTYNE, JM
EASTMAN, LF
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 24期
关键词：
D O I：
10.1063/1.97258
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1659 / 1660
页数：2
相关论文
共 7 条
[1]  
Chan K. T., UNPUB
[2]   DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].
FRITZ, IJ ;
PICRAUX, ST ;
DAWSON, LR ;
DRUMMOND, TJ ;
LAIDIG, WD ;
ANDERSON, NG .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969
[3]   VERY LOW THRESHOLD CURRENT GAAS-ALGAAS GRIN-SCH LASERS GROWN BY MBE FOR OEIC APPLICATIONS [J].
FUJII, T ;
YAMAKOSHI, S ;
NANBU, K ;
WADA, O ;
HIYAMIZU, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :259-261
[4]   PROPERTIES OF INXGA1-XAS-GAAS STRAINED-LAYER QUANTUM-WELL-HETEROSTRUCTURE INJECTION-LASERS [J].
LAIDIG, WD ;
LIN, YF ;
CALDWELL, PJ .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) :33-38
[5]   EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
TSANG, WT .
APPLIED PHYSICS LETTERS, 1982, 40 (03) :217-219
[6]   HIGH EXTERNAL EFFICIENCY (36-PERCENT) 5-MU-M MESA ISOLATED GAAS QUANTUM WELL LASER BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
WELCH, DF ;
SCHAUS, CF ;
SHEALY, JR .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :121-123
[7]  
ZORY PS, 1980, ELECTRON LETT, V22, P476
1