EXCITONIC MOBILITY EDGE IN GAASXP1-X

被引：31

作者：

GERSHONI, D

COHEN, E

RON, A

机构：

[1] TECHNION ISRAEL INST TECHNOL, DEPT CHEM, IL-32000 HAIFA, ISRAEL

[2] TECHNION ISRAEL INST TECHNOL, INST SOLID STATE, IL-32000 HAIFA, ISRAEL

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 56卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.56.2211

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2211 / 2214

页数：4

共 14 条

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[7] EXCITON TUNNELING INHIBITED BY DISORDER IN GAAS1-XPX-N [J].

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[8] SUBNANOSECOND SPECTROSCOPY OF DISORDER-LOCALIZED EXCITONS IN CDS0.53SE0.47 [J].

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[9] EVIDENCE FOR EXCITON LOCALIZATION BY ALLOY FLUCTUATIONS IN INDIRECT-GAP GAAS1-XPX [J].

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[10] PHOTOLUMINESCENCE STUDY OF EXCITONS LOCALIZED IN INDIRECT-GAP GAAS1-XPX [J].

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PHYSICAL REVIEW B, 1984, 29 (06) :3217-3224

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