EXCITONIC MOBILITY EDGE IN GAASXP1-X

被引：31

作者：

GERSHONI, D

COHEN, E

RON, A

机构：

[1] TECHNION ISRAEL INST TECHNOL, DEPT CHEM, IL-32000 HAIFA, ISRAEL

[2] TECHNION ISRAEL INST TECHNOL, INST SOLID STATE, IL-32000 HAIFA, ISRAEL

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 56卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.56.2211

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2211 / 2214

页数：4

共 50 条

[1] INVESTIGATIONS OF HILLOCKS IN STRAINED GAASXP1-X
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[2] ELECTROLUMINESCENCE AND LASING ACTION IN GAASXP1-X
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[3] PREPARATION OF GAASXP1-X BY VAPOR PHASE REACTION
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[4] GROWTH AND CHARACTERIZATION OF STRAINED LAYERS OF GAASXP1-X
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[5] LIGHT EMISSION FROM GAASXP1-X DIODES
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[6] A NONDESTRUCTIVE MEASUREMENT OF COMPOSITION IN GAASXP1-X ALLOYS
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[7] NATURE OF ULTRAVIOLET REFLECTION MAXIMA OF GAP AND GAASXP1-X
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[8] RAMAN SCATTERING FROM LATTICE VIBRATIONS OF GAASXP1-X
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[9] OPTICAL ORIENTATION OF ELECTRONS IN ALXGA1-AS-X AND GAASXP1-X
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[10] X-RAY AND OPTICAL INVESTIGATIONS OF GAASXP1-X CRYSTALS
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